Journal
NANOSCALE
Volume 11, Issue 7, Pages 3240-3247Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8nr09248f
Keywords
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Funding
- Academy of Finland [276376, 284548, 295777, 304666, 312551, 314810, 320167]
- Academy of Finland Centre of Excellence program [312297]
- Academy of Finland Flagship program [320167]
- Business Finland (OPEC, A-photonics)
- European Union's Seventh Framework Program [631610]
- Aalto Centre of Quantum Engineering
- China Scholarship Council
- European Union's Horizon 2020 research and innovation programme [820423]
- Academy of Finland (AKA) [312551] Funding Source: Academy of Finland (AKA)
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van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe2/SnSe2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths. The highest photoresponsivity and detectivity at 532 nm are approximate to 588 A W-1 and 4.4 x 10(10) Jones and those at 1550 nm are approximate to 80 A W-1 and 1.4 x 10(10) Jones, which are superior to those of the current state-of-the-art layered transition metal dichalcogenides based photodetectors under similar measurement conditions. Our work not only provides a new method for designing high-performance broadband photodetectors but also enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications, such as modulators and lasers.
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