Journal
SOLAR RRL
Volume 3, Issue 2, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/solr.201800274
Keywords
electron transport layers; n-type doping; perovskite solar cells; polarity control; p-n heterojunction
Funding
- National Key R&D Program of China [2017YFE0106000]
- National Natural Science Foundation of China [51773212, 21574144, 61705240]
- Zhejiang Provincial Natural Science Foundation of China [LR16B040002]
- Ningbo Municipal Science and Technology Innovative Research Team [2015B11002, 2016B10005]
- CAS Interdisciplinary Innovation Team, CAS Key Project of Frontier Science Research [QYZDB-SSW-SYS030]
- CAS Key Project of International Cooperation [174433KYSB20160065]
- China Postdoctoral Science Foundation [BX20180322]
- China National Postdoctoral Council
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Electron transport layer (ETL)-free perovskite solar cells (PSCs) are getting much more attention with their simpler structure and potentially low cost as well as higher stability. However, the elimination of ETL (such as TiO2) with intrinsically deep valance band level leads to the absence of the hole blocking mechanism and thus serious charge recombination at the FTO/perovskite interface compared with ETL-based devices. An interface band bending associated built-in electric field is an essential driving force of charge separation. Here, by intentional polarity tailoring of perovskite via incorporation of Sb as a shallow donor, ETL-free PSCs with optimized energy level alignment both at the front and rear interfaces are constructed, resulting in an enhanced built-in electric field and thus efficient majority carrier collection and minority blocking as well as reduced interfacial charge recombination at both interfaces. Device simulation calculations also confirm the importance of polarity control for device performance improvement. The effect of doping on the perovskite films properties and device performance are systematically demonstrated. Correspondingly, ETL-free PSCs with a champion power conversion efficiency of 12.62% is achieved.
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