4.4 Article

Hydrogen Centers in β-Ga2O3: Infrared Spectroscopy and Density Functional Theory

Journal

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume 8, Issue 7, Pages Q3103-Q3110

Publisher

ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.0221907jss

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Funding

  1. NSF [DMR 1160756]
  2. Department of the Defense, Defense Threat Reduction Agency
  3. [HDTRA1-17-1-0011]

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beta-Ga2O3 is a transparent conducting oxide with a wide bandgap (4.9 eV) whose properties are generating widespread interest. It has been found that hydrogen can play a key role in the conductivity of Ga2O3 by passivating deep defects and acting as a shallow donor. Recent vibrational spectroscopy experiments have found a dominant hydrogen center with a polarized O-H line at 3437 cm(-1). These experiments along with theoretical analysis assign this line to a defect consisting of two equivalent H atoms trapped at a relaxed Ga vacancy. An expansion of this research has involved annealing treatments as well as measurements at different crystal orientations. These results have discovered a reservoir of hidden hydrogen in Ga2O3 whose identification involves a variety of hydrogen centers associated with the Ga vacancy, as well as other possible species. (C) The Author(s) 2019. Published by ECS.

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