Journal
PHYSICAL REVIEW B
Volume 99, Issue 9, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.99.094109
Keywords
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Funding
- Spanish Ministerio de Ciencia, Innovacion y Universidades
- Spanish Research Agency (AEI)
- European Fund for Regional Development (FEDER) [MAT2016-75586-C4-1/3-P]
- Generalitat Valenciana [Prometeo/2018/123]
- National Natural Science Foundation in China [61290304]
- Frontier Science Research Project (Key Programs) of Chinese Academy of Sciences [QYZDJ-SSW-SLH018]
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Element doping and pressure compression may change material properties for improved performance in applications. We report pressure-induced metallization in the semiconductor Cd0.90Zn0.1Te. Transport measurements showed an overall resistivity drop of 11 orders of magnitude under compression up to 12 GPa, which is indicative of a metallization transition. X-ray diffraction measurements revealed that the sample underwent a structural transition from a cubic-F4 (3) over barm phase (zinc blende) to a cubic-Fm (3) over barm phase (rock salt) at about 5.5 GPa, followed by another transition to an orthorhombic Cmcm structure at 13 GPa. A huge volume collapse of about 18% was observed during the first phase transition, suggesting a first-order phase transition. The disappearance or weakening of Raman modes, temperature-dependent resistivity, and ab initio calculation results depict the metallic nature of both the rock-salt and Cmcm phases. The band structure changes and increased carrier density (especially at the first structural transition) are likely a consequence of the structural transition.
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