Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 71, Issue -, Pages 139-144Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2017.07.020
Keywords
Cu doped SnS; Spin coating; Optical properties; Electrical properties
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Funding
- Technology Innovation Program - Ministry of Trade, Industry & Energy (MOTIE, Korea) [10067492]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10067492] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Copper-doped tin sulfide thin films (Cu-SnS) with different Cu doping concentrations were prepared by using the spin coating technique and their structural, electrical, and optical properties were studied. All the prepared films were polycrystalline and exhibited diffraction peaks corresponding to orthorhombic SnS with the preferred (111) orientation. The XRD spectra revealed improvement in the preferential orientation and crystalline quality with up to 4% Cu doping concentration, whereas Cu doping concentrations above 4% deteriorate the preferential orientation and crystalline quality. It has been observed that upon Cu doping the band gap decreased significantly from 1.46 eV (pure SnS) to 1.37 eV (4% of Cu-doped SnS). Hall measurements revealed the p-type semiconducting nature of the SnS thin films. The observations revealed that doping of SnS with Cu causes a noticeable drop in the room-temperature resistivity value from 10(5) Omega-cm for pure SnS to 10(3) Omega-cm for 4% Cu doped SnS.
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