☆ 4.6 Article

Electron spin and momentum lifetimes in two-dimensional Si accumulation channels: Demonstration of Schottky-barrier spin metal-oxide-semiconductor field-effect transistors at room temperature

PHYSICAL REVIEW B (2019)

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Electron spin and momentum lifetimes in two-dimensional Si accumulation channels: Demonstration of Schottky-barrier spin metal-oxide-semiconductor field-effect transistors at room temperature

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