Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 71, Issue -, Pages 332-341Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2017.08.022
Keywords
ZnO; H2S gas; XPS; Stability; Selectivity
Ask authors/readers for more resources
Copper (Cu) doped zinc oxide (ZnO) thin films were successfully prepared by a simple sol-gel spin coating technique. The effect of Cu doping on the structural, morphology, compositional, microstructural, optical, electrical and H2S gas sensing properties of the films were investigated by using XRD, FESEM, EDS, FTIR, XPS, Raman, HRTEM, and UV-vis techniques. XRD analysis shows that the films are nanocrystalline zinc oxide with the hexagonal wurtzite structure and FESEM result shows a porous structured morphology. The gas response of Cu-doped ZnO thin films was measured by the variation in the electrical resistance of the film, in the absence and presence of H2S gas. The gas response in relation to operating temperature, Cu doping concentration, and the H2S gas concentration has been systematically investigated. The maximum H2S gas response was achieved for 3 at% Cu-doped ZnO thin film for 50 ppm gas concentration, at 250 degrees C operating temperature.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available