Journal
MATERIALS LETTERS
Volume 195, Issue -, Pages 186-189Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2017.02.046
Keywords
Sb2S3 thin films; In situ growth; Reactive sputtering; Top sub-cells
Funding
- Fundamental Research Funds of Central South University [2016zzts284, 2016zzts287]
- National Natural Science Foundation of China [51272292]
- Hunan Provincial Natural Science Foundation of China [13JJ1003, 2015JJ2175]
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Si-based tandem solar cells have emerged as a promising alternative to replace the current high efficiency silicon single junction solar cells. Sb2S3 is a promising candidates for top cell absorbers due to its suitable band gap, non-toxic and earth-abundant constituent, simple composition, and long term stability. Here, in situ growth of Sb2S3 thin films by radio frequency (RF) reactive sputtering on n-Si(100) substrates is reported. The effects of the growth temperature on morphology, structure, optical and electrical properties of the films were evaluated. The top sub-cell device shows an open circuit voltage (V-oc) of 367 mV, indicating the potential to be the top cell of the next generation Si-based tandem solar cells. (C) 2017 Elsevier B.V. All rights reserved.
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