Journal
MATERIALS LETTERS
Volume 188, Issue -, Pages 347-350Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2016.11.113
Keywords
ZnO; g-C3N4; Semiconductors; Nanocomposites; Photocatalyst
Funding
- National Science Foundation of China [21306040]
- Key Scientific Research Project of Colleges and Universities in Henan Province [15A540007, 16A416001]
- Science Foundation of Henan University of Technology the Key Young Teachers Project of Henan Province [2014CXRC06]
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We proposed a facile method to prepare ZnO@g-C3N4 core/shell type photocatalyst via a two-step calcination. Thin layer of g-C3N4 was homogeneously coated on ZnO nanoparticles with well-defined interface, which reduces the charge transfer resistance and results in distinct PL quenching. Therefore, the as-prepared ZnO@g-C3N4 demonstrates significant photocatalytic improvement under visible-light irradiation than ZnO (similar to 35 times) and g-C3N4 (similar to 5 times) due to the effective charge separation and suppressed carrier recombination. Moreover the ZnO@g-C3N4 photocatalyst shows high stability which retains 90% of its initial activity after 5-cycle reuse. (C) 2016 Published by Elsevier B.V.
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