Journal
MATERIALS LETTERS
Volume 186, Issue -, Pages 390-393Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2016.10.013
Keywords
Ag2ZnSnS4(AZTS); P-type; Sputtering; Thin film; Solar cell
Funding
- National Natural Science Foundation of china [51272033, 51572037, 51335002]
- Priority Academic Program Development of Jiangsu Higher Education Institutions
- Natural Science Foundation of the Jiangsu Higher Education Institutions of China [14KJA430001]
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In this paper, we reported a p-type Ag2ZnSnS4 (AZTS) thin film as a novel absorber layers in solar cells. P-type AZTS thin film was successfully fabricated by sulfurization of the precursor film deposited by magnetron sputtering. The AZTS thin film has a band gap value of about 1.5 eV and a hole mobility of 219.24 cm(2) v(-1) s(-1). Also, solar cells with the structure of Mo/AZTS/CdS/ZnO/ITO/Ag were fabricated and achieved an efficiency of 1.38%.
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