Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 21, Issue 13, Pages 7075-7082Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8cp07761d
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Funding
- National Natural Science Foundation of China [11874148]
- National Basic Research Program of China [2012CB921401]
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Using first-principles calculations, we studied the influence of in-plane strain on the electronic properties of the polar LaAlO3/SrTiO3 (LAO/STO)(110) superlattice. We propose that alternate positively (n-type) and negatively (p-type) charged interfaces can be introduced along the [110] direction, without changing the stoichiometry of the system, if the np-type LAO/STO(001) superlattice is constructed in a 45 degrees stepped pattern. We find that when the LAO-STO layer thickness is larger than the critical thickness of the insulator-metal transition, a quasi-two dimensional hole gas and an anisotropic quasi-two dimensional electron gas are formed at alternate interfaces. By applying uniaxial in-plane strains, an unexpected indirect-to-direct bandgap transition occurs in the polar LAO/STO(110) superlattices. The strain-induced changes in the O-2p orbitals near the p-type interface modify the dispersion of valence-band edges, leading to the transition.
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