Journal
NPJ 2D MATERIALS AND APPLICATIONS
Volume 3, Issue -, Pages -Publisher
NATURE RESEARCH
DOI: 10.1038/s41699-019-0091-9
Keywords
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Funding
- NRF (NRL program) [2017R1A2A1A05001278]
- NRF (SRC program) [2017R1A5A1014862]
- NRF (vdWMRC center)
- National Research Foundation of Korea (NRF) - Ministry of Education [NRF-2017R1A6A3A11035872]
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Two-dimensional molybdenum disulfide (MoS2) has substantial potential as a semiconducting material for devices. However, it is commonly prepared by mechanical exfoliation, which limits flake size to only a few micrometers, which is not sufficient for processes such as photolithography and circuit patterning. Chemical vapor deposition (CVD) has thus become a mainstream fabrication technique to achieve large-area MoS2. However, reports of conventional photolithographic patterning of large-area 2D MoS2-based devices with high mobilities and low switching voltages are rare. Here we fabricate CVD-grown large-area MoS2 field-effect transistors (FETs) by photolithography and demonstrate their potential as switching and driving FETs for pixels in analog organic light-emitting diode (OLED) displays. We spin-coat an ultrathin hydrophobic polystyrene layer on an Al2O3 dielectric, so that the uniformity of threshold voltage (Vth) of the FETs might be improved. Our MoS2 FETs show a high linear mobility of approximately 10cm(2)V(-1)s(-1), due to a large grain size around 60 mu m, and a high ON/OFF current ratio of 10(8). Dynamic switching of blue and green OLED pixels is shown at similar to 5 V, demonstrating their application potential.
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