Journal
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume 7, Issue 1, Pages 435-443Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2019.2907314
Keywords
TFETs; SOI; ground plane; scalability; short-channel effects; ambipolar current
Categories
Funding
- Science and Engineering Research Board (SERB), Department of Science and Technology (DST), India [ECR/2016/001268]
- University Grants Commission (UGC)
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Tunnel field-effect transistors (TFETs) are known to exhibit degraded electrical characteristics at smaller channel lengths, primarily due to direct source-to-drain band-to-band tunneling (BTBT). In this paper, we propose a technique to suppress direct source-to-drain BTBT by increasing the effective distance between the source and the drain. We propose to add a ground plane (GP) in the buried oxide of a silicon-on-insulator (SOI) TFET which depletes the drain and increases the effective source-to-drain distance. Using 2-D device simulations it is shown that the introduction of the ground plane is effective in reducing OFF-state current and ambipolar current, as well as, in improving the average subthreshold swing for the small channel length SOI-TFETs. Additionally, the addition of GP is helpful in ameliorating the short-channel effects, such as drain-induced barrier lowering and threshold voltage roll-off.
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