Journal
NANOSCALE
Volume 11, Issue 17, Pages 8394-8401Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8nr10452b
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Funding
- Nano Mission, Department of Science and Technology (DST), India [SR/NM/NS-1060/2012, SR/NMITP-62/2016(G)]
- University Grants Commission (UGC), India
- Visvesvaraya PhD Scheme, Ministry of Electronics and Information Technology (MeitY), India
- MHRD
- DST Nano Mission
- MeitY
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We demonstrate all electrical measurements on NEMS devices fabricated using CVD grown monolayer MoS2. The as-grown monolayer film of MoS2 on top of the SiO2/Si wafer is processed to fabricate arrays and individual NEMS devices without the complex pick and transfer techniques associated with graphene. The electromechanical properties of the devices are on par with those fabricated using the exfoliation method. The frequency response of these devices is then used as a probe to estimate the linear thermal expansion coefficient of the material and evaluate the effect of strain on the effective Duffing nonlinearity in the devices.
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