Structural characterization of magnetron sputtered ZnO thin films on Si(100) using RBS, scanning and high resolution transmission electron microscopy methods

Wide band gap materials like ZnO are being studied due to their potential applications in various devices. Here, in this work, ZnO thin films have been prepared using magnetron sputtering technique. Scanning Electron Microscopy (SEM) studies show rough surface. Only partial coverage is obtained for lower thickness and the coverage increases to maximum at higher thicknesses. Rutherford backscattering spectrometry results show the interfacial diffusion at Si-ZnO interface. High Resolution Transmission Electron Microscopy (HRTEM) and Selected Area Diffraction (SAD) studies show the polycrystalline nature of the films. As the thickness increases, number of defects also increases. Presence of Moire fringes and planar defects have been discussed using Fourier filtered HRTEM images and their corresponding FFTs.