Journal
NEW JOURNAL OF CHEMISTRY
Volume 43, Issue 17, Pages 6683-6687Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8nj06509h
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Funding
- NSFC [51672309, 21503279, 51172285, 51372277]
- Fundamental Research Funds for Central Universities [18CX07009A, 15CX08005A]
- Taishan scholars program of Shandong province [tsqn20182027]
- open project program of state key laboratory of petroleum pollution control [PPC2016008]
- technological leading scholar of 10000 talent project [W03020508]
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Modified g-C3N4 sheets (CNS) with a bandgap of 2.61 eV were fabricated through physical vapor deposition (PVD) of g-C3N4. During the PVD process, a series of gaseous derivatives derived from pristine g-C3N4 at 700 degrees C condense into CNS at low temperature (<400 degrees C). As a result, CNS still retains a typical semiconductor structure (bandgap of 2.61 eV), while at the same time, C?N and O-H defect groups were introduced to its tri-s-triazine-based structure.
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