4.6 Article

Quantum dot state initialization by control of tunneling rates

Journal

PHYSICAL REVIEW B
Volume 99, Issue 20, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.99.201409

Keywords

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Funding

  1. Joint Research Project e-SI-Amp [15SIB08]
  2. Joint Research Project SEQUOIA [17FUN04]
  3. European Metrology Programme for Innovation and Research (EMPIR)
  4. European Unions Horizon 2020 research and innovation programme
  5. University of Latvia [AAP2016/B031]

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We study the loading of electrons into a quantum dot with dynamically controlled tunnel barriers. We introduce a method to measure tunneling rates for individual discrete states and to identify their relaxation paths. Exponential selectivity of the tunnel coupling enables loading into specific quantum dot states by tuning independently energy and rates. While for the single-electron case orbital relaxation leads to fast transition into the ground state, for electron pairs triplet-to-singlet relaxation is suppressed by long spin-flip times. This enables the fast gate-controlled initialization of either a singlet or a triplet electron pair state in a quantum dot with broad potential applications in quantum technologies.

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