Characterization of in-situ Synthesized CdSxSe1-x Ternary Alloy Nanowire Photosensor

CdSxSe1-x ternary alloy nanowires (x = 0, 0.5, 1.0) were fabricated by in-situ synthesis on interdigitated electrode. Morphology analysis of the alloy nanowires according to the synthesis zone and composition analysis of the nanowires were carried out by SEM and EDX. The crystal structures of the alloy nanowires were studied by XRD analysis. The I-V characteristics of the nanowire photosensors were analyzed according to the intensity of incident light. The influence of zonal synthesis position on the photosensor response to the wavelength of incident light was also analyzed, and was found to be related to the bandgap of alloy nanowires. The analysis results indicate that photosensors with a specific photoresponse could be selected based on the composition of the source materials of nanowires as well as by controlling the in-situ synthesis zone.