Journal
ACS APPLIED ENERGY MATERIALS
Volume 2, Issue 5, Pages 3878-3885Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsaem.9b00544
Keywords
BiSI; thin-film; photovoltaic; power conversion losses; band structure; G(0)W(0)@PBE0
Funding
- U.K. Engineering and Physical Sciences Research Council (EPSRC) [EP/L017792/1]
- Mexico's Consejo Nacional de Ciencia y Tecnologia (CONACyT)
- U.K. government's global scholarship program - Foreign and Commonwealth Office (FCO)
- EPSRC capital grant [EP/K035746/1]
- BBSRC/EPSRC [L01386X]
- EPSRC [EP/L022532/1, EP/K035746/1, EP/L017792/1] Funding Source: UKRI
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A single-precursor solution approach is developed for depositing stoichiometric BiSI thin films featuring pure paraelectric orthorhombic (Pnam) phase. The compact and homogeneous films are composed of flake-shaped grains oriented antiplanar to the substrate and display a sharp optical transition corresponding to a bandgap of 1.57 eV. Optical and Raman signatures of the thin films are rationalized using the quasiparticle G(0)W(0)@PBE0 and density functional perturbation theory calculations. Electrochemical impedance spectroscopy revealed n-type doping with valence and conduction band edges located at 4.6 and 6.2 eV below vacuum level, respectively. Planar BiSI solar cells are fabricated with the architecture: glass/FTO/SnO2/BiSI/F8/Au, where F8 is poly(9,9-di-n-octylfluorenyl-2,7-diyl), showing record conversion efficiency of 1.32% under AM 1.5 illumination.
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