3.8 Proceedings Paper

Triple-Barrier Resonant-Tunnelling Diode THz Detectors with on-chip antenna

Journal

Publisher

IEEE
DOI: 10.23919/gemic.2019.8698124

Keywords

tunneling diode; sub-millimeter-wave detector; rectification

Funding

  1. DFG [SFB TRR 196 MARIE C02/C05]
  2. EU within the Innovative Training Network [765426 TeraApps]

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Signal detection at (sub-)mm-wave frequencies via a single chip size component is discussed. The monolithic integration consists of high current density InP-based Triple Barrier Resonant Tunneling Diode into an on-chip antenna. The asymmetrical current voltage characteristic of the Triple Barrier Resonant Tunneling Diode enables signal detection at zero bias. A very high responsivity above 250 GHz is experimentally demonstrated. Low temperature DC rectification factor of the diode is investigated and a thermionic current contribution over the temperature is presented.

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