Journal
2019 12TH GERMAN MICROWAVE CONFERENCE (GEMIC)
Volume -, Issue -, Pages 17-19Publisher
IEEE
DOI: 10.23919/gemic.2019.8698124
Keywords
tunneling diode; sub-millimeter-wave detector; rectification
Categories
Funding
- DFG [SFB TRR 196 MARIE C02/C05]
- EU within the Innovative Training Network [765426 TeraApps]
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Signal detection at (sub-)mm-wave frequencies via a single chip size component is discussed. The monolithic integration consists of high current density InP-based Triple Barrier Resonant Tunneling Diode into an on-chip antenna. The asymmetrical current voltage characteristic of the Triple Barrier Resonant Tunneling Diode enables signal detection at zero bias. A very high responsivity above 250 GHz is experimentally demonstrated. Low temperature DC rectification factor of the diode is investigated and a thermionic current contribution over the temperature is presented.
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