Journal
IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS
Volume 5, Issue 1, Pages 19-24Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JXCDC.2019.2904191
Keywords
Artificial neuron; leaky integrate-and-fire (LIF) neuron; magnetic domain wall (DW); neural network crossbar; neuromorphic computing; three-terminal magnetic tunnel junction (3T-MTJ)
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Spintronic three-terminal magnetic-tunnel-junction (3T-MTJ) devices have gained considerable interest in the field of neuromorphic computing. Previously, these devices required external circuitry to implement the leaking functionality that leaky integrate-and-fire (LIF) neurons should display. However, the use of external circuitry results in decreased device efficiency. We previously demonstrated lateral inhibition with a 3T-MTJ neuron that intrinsically performs the leaking, integrating, and firing functions; however, it required the fabrication of a complex multilayer structure. In this paper, we introduce an anisotropy gradient to implement a single-layer intrinsically leaking 3T-MTJ LIF neuron without the use of any external circuitry. This provides the leaking functionality with no hardware cost and reduced fabrication complexity, which increases the device, circuit, system, and cost efficiency.
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