Journal
SOLAR RRL
Volume 3, Issue 7, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/solr.201900079
Keywords
high hole mobility polymer donors; nonfullerene acceptors; organic solar cells; thickness tolerance; trade-off between J(sc) and V-oc
Funding
- National Natural Science Foundation of China [51673070, U1401244, 51521002, 91633301, 51527804, 21225418]
- Natural Science Foundation of Guangdong Province [2017A030313326, 2016A030312002]
- GDUPS (2013)
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Herein, a high-mobility polymer (Si25) pairing a nonfullerene acceptor (O-IDTBR) is introduced to construct active layers of organic solar cells (OSCs). The OSCs based on Si25 and O-IDTBR with comparable bandgaps of 1.61 eV show high open-circuit voltage (V-oc) of 1.03 V. Suitable energy level offsets between the donor and acceptor as well as sufficient photon absorbance by a 400 nm thick active layer afford a notable short-circuit current (J(sc)) of 21.11 mA cm(-2), indicating a significantly suppressed trade-off between J(sc) and V-oc among OSCs. In addition, notable high power conversion efficiency (PCE) between 10.2% and 11.54% can be achieved with thick blend films from 210 to 560 nm, a thickness range beneficial to pin-hole free printing. The maximum PCE of 11.54% corresponds to a 400 nm thick blend film, which is a rare thickness for high-efficiency nonfullerene-based OSCs. The corresponding fill factors (FFs) are between 51.59% and 53.33%. The inferior FF is due to a very low electron-hole mobility ratio, offering space for future FF elevation. The results highlight the high V-oc and J(sc) potentials for thick-film nonfullerene OSCs based on a high hole mobility donor as well as looking forward to a high electron mobility nonfullerene acceptor.
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