4.7 Article

B4C nanosheets decorated with in situ-derived boron-doped graphene quantum dots for high-efficiency ambient N2 fixation

Journal

CHEMICAL COMMUNICATIONS
Volume 55, Issue 51, Pages 7406-7409

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c9cc03413g

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Funding

  1. National Natural Science Foundation of China [21675078, 21775065]

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In situ-derived boron-doped graphene quantum dots can significantly improve the activity of boron carbide nanosheets for artificial N-2 fixation and reduction with superior electrocatalytic activity (NH3 yield: 28.6 mu g h(-1) mg(cat.)(-1) at -0.45 V vs. RHE; faradaic efficiency: 16.7%), high electrochemical stability, and high selectivity in 0.1 M HCl under ambient conditions.

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