Journal
PHYSICAL REVIEW B
Volume 100, Issue 4, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.100.045104
Keywords
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Funding
- National Natural Science Foundation of China [U1832214, 11774007]
- National Key R&D Program of China [2018YFA0305601]
- Strategic Priority Research Program of the Chinese Academy of Sciences [XDB28000000]
- Ministry of Science and Technology (MOST) in Taiwan [MOST108-2636-M-006-002]
- National Cheng Kung University, Taiwan
- National Center for Theoretical Sciences (NCTS), Taiwan
- MOST, Taiwan [MOST 107-2627-E-006-001]
- U.S. Department of Energy under Basic Energy Sciences [DOE/BES DE-FG-02-05ER46200]
- Beckman Young Investigator award
- National Science Foundation [NSF-OIA-1832967]
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We survey the electrical transport properties of single-crystalline, topological chiral semimetal CoSi grown via different methods. High-quality CoSi single crystals were found in the growth from a tellurium solution. The sample's high carrier mobility enables us to observe quantum oscillations (QOs) in its thermoelectrical signals. Our analysis of QOs reveals two spherical Fermi surfaces around the R point in its Brillouin zone corner. The extracted Berry phases of these electron orbits are consistent with the -2 chiral charge as reported in density functional theory (DFT) calculations. A detailed analysis of the QOs reveals that the spin-orbit-coupling-induced band splitting is less than 2 meV near the Fermi level, one order of magnitude smaller than our DFT calculation. We also report a large phonon-drag-induced Nernst effect in CoSi at intermediate temperatures.
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