Journal
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume 71, Issue 6, Pages 325-328Publisher
KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.71.325
Keywords
Double gate (DG); In-Ga-Zn-O (IGZO); Thin-film transistor (TFT); Positive-bias temperature stress (PBTS)
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Funding
- Kwangwoon University
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Science and Technology [2016R1A2B4008754]
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In this study, flexible double-gate thin-film transistor (TFT)-based amorphous indium-galliumzinc- oxide (a-IGZO) was fabricated on a polyimide substrate. Double-gate operation with connected front and back gates was compared with a single-gate operation. As a result, the double-gate a- IGZO TFT exhibited enhanced electrical characteristics as well as improved long-term reliability. Under positive- and negative-bias temperature stress, the threshold voltage shift of the double-gate operation was much smaller than that of the single-gate operation.
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