Journal
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
Volume 37, Issue 4, Pages 1175-1185Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.jeurceramsoc.2016.10.029
Keywords
Tantalum carbide; Coating; Aluminum nitride; Silicon carbide; Single crystal growth
Categories
Ask authors/readers for more resources
TaC coatings were deposited on graphite substrates via wet powder forming and sintering to potentially achieve both a highly reliable and low-cost process. Non-aqueous solvent mixtures of TaC slurries were optimized through characterization of raw materials and a novel design guide based on Hansen solubility parameters. The optimized TaC slurries enabled the formation of high-quality TaC powder compact films with ultrahigh powder packing densities of >= 70% (ca. 85% at maximum), which contributed to prevent defect formation in the TaC coatings after sintering. The TaC-coated components were tested in practical high-temperature processes, such as AIN and SiC bulk single crystal growth processes, and a SiC device fabrication process, which confirmed sufficiently low-levels of impurity incorporation and surface contamination from the TaC layers. The novel TaC-coated graphite components will contribute to higher quality and lower cost for bulk crystal growth, device fabrication, and epitaxial film growth processes of group-III nitrides and SiC. (C) 2016 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available