Journal
JOURNAL OF SEMICONDUCTORS
Volume 40, Issue 1, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1674-4926/40/1/012801
Keywords
gallium oxide; Schottky barrier diode; power electronics; wide bandgap material
Categories
Ask authors/readers for more resources
Beta-phase gallium oxide (beta-Ga2O3) Schottky barrier diodes were fabricated on highly doped single-crystal substrates, where their temperature-dependent electrical properties were comprehensively investigated by forward and reverse current density - voltage and capacitance - voltage characterization. Both the Schottky barrier height and the ideality factor showed a temperature-dependence behavior, revealing the inhomogeneous nature of the Schottky barrier interface caused by the interfacial defects. With a voltage-dependent Schottky barrier incorporated into thermionic emission theory, the inhomogeneous barrier model can be further examined. Furthermore, the reverse leakage current was found to be dominated by the bulk leakage currents due to the good material and surface quality. Leakage current per distance was also obtained. These results can serve as important references for designing efficient beta-Ga2O3 electronic and optoelectronic devices on highly doped substrates or epitaxial layers.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available