4.6 Article

Dealloying at High Homologous Temperature: Morphology Diagrams

Journal

JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 164, Issue 6, Pages C330-C337

Publisher

ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.0061707jes

Keywords

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Funding

  1. National Science Foundation, Division of Materials Research [DMR-1306224]
  2. Division Of Materials Research
  3. Direct For Mathematical & Physical Scien [1306224] Funding Source: National Science Foundation

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Dealloying under conditions of high homologous temperature, T-H, (or high intrinsic diffusivity of the more electrochemically reactive component) is considerably more complicated than at low T-H since solid-state mass transport is available to support this process. At low T-H the only mechanism available for dealloying a solid is percolation dissolution, which results in a bicontinuous solid-void morphology for which nanoporous gold serves as the prototypical example. At high T-H, there is a rich set of morphologies that can evolve depending on alloy composition and the imposed electrochemical conditions, including negative or void dendrites, Kirkendall voids and bi-continuous porous structures. We report on a study of morphology evolution upon delithiation of Li-Sn alloys, produced by the electrochemical lithiation of Sn sheets. Electrochemical titration and time of flight measurements were performed in order to determine the intrinsic diffusivity of Li, (D) over bar (Li), as a function of alloy composition, which ranged from similar to 5 x 10(-8) -4 x 10(-12) cm(2)s(-1). The activation energy for (D) over bar (Li) was measured in the temperature range 30-140 degrees C and found to be 37.4, 37.9 and 22.5 kJ/mole, respectively for the phases Li2Sn5, LiSn and Li7Sn3. Morphology evolution was studied under conditions of fixed dealloying potential and fixed current density and our results are summarized by the introduction of dealloying morphology diagrams that reveal the electrochemical conditions for the evolution of the various morphologies. (C) The Author(s) 2017. Published by ECS. All rights reserved.

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