Journal
PHOTONICS
Volume 6, Issue 2, Pages -Publisher
MDPI
DOI: 10.3390/photonics6020035
Keywords
optoelectronics; microwave photonics; terahertz sources; Schottky diode; photonic integrated circuits; semiconductor laser; mode locked laser
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Funding
- European Union's Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie grant [642355 FiWiN5G]
- Spanish Ministerio de Economia y Competitividad through Programa Estatal de Investigacion, Desarrollo e Inovacion Orientada a los Retos de la Sociedad (grant iTWIT) [TEC2016-76997-C3-3-R]
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THz communications systems at carrier frequencies above 200 GHz are the key to enable next-generation mobile communication networks with 100 Gbit/s wireless data rates. One of the key questions is, which carrier frequency generation technique will be the most suitable. This is currently addressed by two separate approaches, electronics-based and photonics-based. We present in this paper a truly microwave photonic approach that benefits from the main key features of each, bandwidth, tunability, stability and fiber compatibility from photonics and power handling capability from the electronics. It is based on a Photonic Local Oscillator (PLO), generating a 100 GHz frequency, fed into an electronic frequency multiplier. A high speed uni-travelling carrier photodiode (UTC-PD) provides the 100 GHz PLO for Schottky tripler diodes, generating 300 GHz signal. To feed the UTC-PD, we present a photonic integrated mode locked laser source. According to the simulations and measurements, the developed transmitter can produce a maximum of 12 mu W of THz power at 280 GHz.
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