Journal
FERROELECTRICS
Volume 541, Issue 1, Pages 54-60Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1080/00150193.2019.1574642
Keywords
Lead-free piezoelectric; dielectric; ferroelectric properties; BFGO-BTO
Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF)
- National Research Foundation of Korea (NRF) - Korea government (MSIT) [2018R1A2B6005044]
- National Research Foundation of Korea [NRF-2018R1D1A1B07041634]
- National Research Foundation of Korea [2018R1A2B6005044] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Binary solid solution of gallium (Ga3+)-modified 0.65Bi(1.05)FeO(3)-0.35BaTiO(3) (BFGO-BTO with 0-2 mol% Ga3+ content) ceramics were synthesized by a solid-state reaction method, followed by water quenching process. The effects of Ga3+ modifications on the crystal structure, microstructure, dielectric, ferroelectric, and piezoelectric properties of the BFO-BTO ceramics were studied. X-ray diffraction patterns confirmed a single perovskite phase without any secondary phases. Improvements of ferroelectric and piezoelectric properties were obtained at the optimum composition of BFGO-BTO system. Meanwhile, BFGO-BTO ceramics had a high static piezoelectric coefficient (d(33)) of 128 pC/N at 1.5 mol% Ga3+-content with relatively high operating temperature compared to other lead-free bismuth (Bi)-based systems.
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