Journal
SOLAR RRL
Volume 3, Issue 4, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/solr.201800339
Keywords
annealing atmosphere; inverted; NiO; oxygen partial pressure; perovskite solar cell
Funding
- National Research Foundation of Korea (NRF) - Ministry of Science, ICT Future Planning (MSIP) of Korea [NRF-2012M3A6A7054861, NRF2014M3A6A7060583, NRF-2016M3D1A1027663, NRF2016M3D1A1027664, NRF2015M1A2A2053004]
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The effect of annealing atmosphere and importance of oxygen partial pressure upon annealing NiO film for achieving high efficiency inverted perovskite solar cells (PSCs) is reported. The solution-process NiO films are deposited on an FTO (fluorine-doped tin oxide) substrate and annealed at 400 degrees C under different atmospheres of air, O-2, N-2, and Ar. The devices using air- and O-2-annealed NiO films show better photovoltaic performance than the N-2- and Ar-annealed ones, mostly due to large difference in photocurrent density (J(sc)) of approximate to 20mAcm(-2) for air and O-2 vs approximate to 15mAcm(-2) for N-2 and Ar. Oxygen-excess condition leads to more p-type characteristics along with better electrical and interfacial properties, leading to higher photovoltaic performance. When comparing air and O-2 condition, the air-annealed NiO film shows slightly better power conversion efficiency (PCE) (15.68% for air vs. 14.93% for O-2), being indicative of importance of oxygen partial pressure. By carefully modifying oxygen content, the best photovoltaic performance is achieved from the NiO film annealed at the O-2/(O-2+N-2) ratio of 30%, delivering a PCE of 16.32%.
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