Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films

In this work, we applied conventional Van der Palm and circular transmission line method (CTLM) test structures to determine the sheet and contact resistance of ultra-thin (110 nm) tungsten films grown by Hot-Wire assisted Atomic Layer Deposition, as well as their temperature coefficient of resistance (TCR). We finally explored the field effect (FE) in these layers. From fundamental point of view, it is important to explore the impact of film thickness on film's electrical behavior, whereas practically this knowledge is crucial for the existing and foreseen applications.