Journal
CRYSTENGCOMM
Volume 21, Issue 29, Pages 4298-4304Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9ce00539k
Keywords
-
Categories
Funding
- Ministry of Science and Technology of Taiwan [MOST-107-2636-M-009-002]
- Center for the Semiconductor Technology Research from The Featured Areas Research Center Program
- Ministry of Science and Technology, Taiwan [MOST-108-3017-F-009-003]
Ask authors/readers for more resources
We investigated the vapor-solid-solid growth of Si nanowires from Ni silicides on Si(111), Si(110), and GaN substrates. The morphology and structures of Si on these substrates are distinct, and are dependent on substrate lattices and an epitaxy process during growth. The sidewall facets and epitaxy of silicides and Si were discussed. In addition, Si grown on GaN nanowires was investigated which led to the formation of branched nanowire structures. The Si nanowires/nanodots lie on the surface of GaN nanowires to maintain lower system energy. We manipulated the whole process in a UHV and studied the crystal growth of Si on different lattice substrates. Meanwhile, the process which occurred in a non-UHV led to less regularity on the NiSi2 crystal facets and interface epitaxy between NiSi2 and Si nanowires.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available