4.8 Article

Electrochemical Formation of a p-n Junction on Thin Film Silicon Deposited in Molten Salt

Journal

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 139, Issue 45, Pages 16060-16063

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/jacs.7b09090

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Funding

  1. Global Climate and Energy Project (GCEP) [60853646-118146]
  2. Welch Foundation [F-0021]
  3. National Science Foundation [ECCS-1542159]

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Herein we report the demonstration of electrochemical deposition of silicon p-n junctions all in molten salt. The results show that a dense robust silicon thin film with embedded junction formation can be produced directly from inexpensive silicates/silicon oxide precursors by a two-step electrodeposition process. The fabricated silicon p-n junction exhibits clear diode rectification behavior and photovoltaic effects, indicating promise for application in low-cost silicon thin film solar cells.

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