Journal
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 166, Issue 13, Pages D531-D538Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.0141913jes
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Funding
- Ministry of Human Resources and Development (MHRD)
- Department of Scientific and Industrial Research (DSIR) [DSIR/PACE/TDD-IMPRINT/7510]
- MHRD, Indian Government [10007457]
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Fabrication and characterization of electrodeposited copper filled through-glass vias (TGV) are demonstrated on full-scale fused silica wafer for the first time by a simple combination of electrochemical discharge machining and bottom-up copper electrodeposition. Due to lower cost and easy availability, stainless steel was chosen as tool electrode. Wire-EDM was used to create customized multi-tip tool electrodes that were used to create through-holes in a 520 mu m thick fused silica substrate in less than 10 min. The average tool wear ratio was measured to be around 16. Due to the non-conductive nature of fused silica, these through-holes did not require any insulation and barrier layer and were filled with electrodeposited copper. I-V measurements of the TGVs showed a linear ohmic behavior. The Kelvin resistances of the fabricated TGVs were measured to be ranging from 242 m Omega to 275 m Omega. The average resistance of the fabricated Cu filled TGVs was 256 m Omega. The variation in the TGV resistance was less than +/- 8%. Due to its simplicity, this technique can be used in the fabrication of the integrated radio-frequency (RF) passive devices such as inductors and 3D packaging applications. (c) 2019 The Electrochemical Society.
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