Journal
MOLECULAR CRYSTALS AND LIQUID CRYSTALS
Volume 679, Issue 1, Pages 38-47Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1080/15421406.2019.1597544
Keywords
sol-gel solution process; indium oxide; Raman spectroscopy; thin-film transistor
Funding
- Hallym University Research Fund [2018 (H20180248)]
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We investigate the effect of annealing temperature on the characteristics of solution-processed indium oxide (In2O3) films. From thermogravimetric analysis of the precursor solution, annealing temperatures of 150, 350, and 450 degrees C are adopted. The In2O3 films are analyzed by ultraviolet/visible spectroscopy, atomic force microscopy, grazing incidence X-ray diffraction, and Hall-effect measurement. Raman spectroscopy is used to examine the crystal polymorphism of the solution-processed films. Experimental results suggest that the optimal annealing temperature can be 350 degrees C. The transistor with the In2O3 semiconductor annealed at 350 degrees C exhibits the field-effect mobility of 1.4 V/cm(2) and on/off ratio of 2.1 x 10(6).
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