Journal
CHEMICAL COMMUNICATIONS
Volume 55, Issue 67, Pages 9915-9918Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9cc04069b
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Funding
- Postdoctoral Program for Innovative Talent Support of Chongqing [CQBX201806]
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A device with the lateral structure of Ag vertical bar MnOx vertical bar Ag was developed using a single MnOx nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and displays were feasible under the dual input of electric and moisture signals.
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