Journal
JOURNAL OF MATERIALS CHEMISTRY A
Volume 7, Issue 32, Pages 18971-18979Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9ta03896e
Keywords
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Funding
- Stephen and Ana Hui Fellowship (Imperial College London)
- China Scholarship Council
- Welsh government Ser Cymru Solar programme
- GIST Research Institute (GRI) - GIST
- Global Research Laboratory Program of the National Research Foundation (NRF) - Ministry of Science, ICT & Future Planning [NRF-2017K1A1A2013153]
- GIST-ICL International Collaboration RD Centre
- EPSRC Centre for Doctoral Training in Plastic Electronic Materials [EP/L016702/1]
- Ministry of Science, ICT & Future Planning, Republic of Korea [GIST-14] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Doping is a widely implemented strategy for enhancing the inherent electronic properties of charge transport layers in photovoltaic (PV) devices. Here, in direct contrast to existing understanding, we find that a reduction in p-doping of the organic hole transport layer (HTL) leads to substantial improvements in PV performance in planar p-i-n perovskite solar cells (PSCs), driven by improvements in open circuit voltage (V-OC). Employing a range of transient and steady state characterisation tools, we find that the improvements of V-OC correlate with reduced surface recombination losses in less p-doped HTLs. A simple device model including screening of bulk electric fields in the perovskite layer is used to explain this observation. In particular, photoluminescence (PL) emission of complete solar cells shows that efficient performance is correlated to a high PL intensity at open circuit and a low PL intensity at short circuit. We conclude that desirable transport layers for p-i-n PSCs should be charge selective contacts with low doping densities.
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