Journal
NANOSCALE
Volume 11, Issue 33, Pages 15440-15447Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9nr03721g
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Funding
- 2D Crystal Consortium National Science Foundation (NSF) Materials Innovation Platform [DMR-1539916]
- Northrop Grumman Mission Systems' University Research Program
- Semiconductor Research Corporation Intel/Global Research Collaboration Fellowship [2741.001]
- Air Force Office of Scientific Research [FA-9550-18-1-0347]
- NSF CAREER award [1453924]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1453924] Funding Source: National Science Foundation
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Intercalation of atomic species through epitaxial graphene on silicon carbide began only a few years following its initial report in 2004. The impact of intercalation on the electronic properties of the graphene is well known; however, the intercalant itself can also exhibit intriguing properties not found in nature. This realization has inspired new interest in epitaxial graphene/silicon carbide (EG/SiC) intercalation, where the scope of the technique extends beyond modulation of graphene properties to the creation of new 2D forms of 3D materials. The mission of this minireview is to provide a concise introduction to EG/SiC intercalation and to demonstrate a simplified approach to EG/SiC intercalation. We summarize the primary techniques used to achieve and characterize EG/SiC intercalation, and show that thermal evaporation-based methods can effectively substitute for more complex synthesis techniques, enabling large-scale intercalation of non-refractory metals and compounds including two-dimensional silver (2D-Ag) and gallium nitride (2D-GaNx).
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