Journal
NANOSCALE
Volume 11, Issue 31, Pages 14912-14920Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9nr04475b
Keywords
-
Categories
Funding
- National Natural Science Foundation of China [61604009]
- Fundamental Research Funds for the Central Universities [2018JBM002]
- Beijing Municipal Natural Science Foundation [4164095]
Ask authors/readers for more resources
A three-dimensional (3D) ultraviolet (UV) photodetector was fabricated by decorating a tubular graphene field-effect transistor (GFET) with titanium dioxide (TiO2) nanoparticles (NPs). The unique tubular architecture not only provides a natural 3D optical resonant microcavity to enhance the optical field inside it, but also increases the light-matter interaction area. Strong UV absorption in the TiO2 NPs creates a number of electron-hole pairs, where the electrons are transferred to graphene, while the holes are trapped within the TiO2 NPs, leading to a strong photogating effect on the graphene channel conductance. The photoresponsivity of our 3D GFET photodetector decorated with TiO2 NPs was demonstrated up to 475.5 A W-1 at 325 nm, which is about 2 orders of magnitude higher than that of a 3D GFET photodetector without the TiO2 NP decoration (1 A W-1), and over 3 orders of magnitude higher than that of a recently reported UV photodetector based on the graphene/vertical Ga2O3 nanowire array heterojunction (0.185 A W-1). Moreover, the photoresponsivity and photoresponse speed of the device can be easily tuned by applying a small gate bias (<= 3 V) and/or changing the source-drain bias. These results indicate that the photoresponsivities of graphene-based photodetectors can be significantly improved by exploiting 3D graphene structures and integrating graphene with semiconducting light harvesters simultaneously.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available