Journal
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
Volume 103, Issue -, Pages 224-237Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.jpcs.2016.11.020
Keywords
Boron-doped diamond; High-pressure high-temperature synthesis; Boron content; Superconductivity; Conducting diamond
Funding
- Ministry of Education and Science of the Russian Federation
- Hosei International Fund Foreign Scholars Fellowship program
- Program of the President of the Russian Federation [MK-6048.2015.3]
- Russian Scientific Fund [14-13-00795]
- Russian Foundation for Basic Research [14-23-01015-ofi-m]
- JSPS KAKENHI [16K05758, 26107532]
- Russian Science Foundation [17-13-00047] Funding Source: Russian Science Foundation
- Grants-in-Aid for Scientific Research [16K05758] Funding Source: KAKEN
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The boron-doped diamond (BDD) powder consisting of 40-100 mu m particles was synthesized at 5 GPa and 1500-1600 degrees C from a mixture of 50 wt% graphite and 50 wt% Ni-Mn catalyst with an addition of 1 wt% or 5 wt % boron powder. The size of crystal domains of doped and non-doped diamond was evaluated as a coherent scattering region by X-ray diffraction (XRD) and using small-angle neutron scattering (SANS), being >= 180 nm (XRD) and similar to 100 nm (SANS). Magnetic impurities of NiMnx originating from the catalyst in the synthesis, which prevent superconductivity, were detected by magnetization measurements at 2-300 K. X-ray photoelectron spectroscopy, the temperature dependence of the resistivity, XRD, and Raman spectroscopy reveal that the concentration of electrically active boron is as high as (2 +/- 1)x 10(20) cm(-3) (0.1 at%). To the best of our knowledge, this is the highest boron content for BDD synthesized in high-pressure high-temperature process with metal catalysts.
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