4.7 Article

Dopant-Free Hole Transporting Molecules for Highly Efficient Perovskite Photovoltaic with Strong Interfacial Interaction

Journal

SOLAR RRL
Volume 3, Issue 12, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/solr.201900319

Keywords

dopant-free; hole transporting materials; interfacial interactions; inverted perovskite photovoltaics; p-i-n

Funding

  1. Leading Talents of Guangdong Province Program [2016LJ06N507]
  2. Shenzhen Basic Research Fund [CYJ20170817110652558, JCYJ20170817105201098]
  3. National Key Research and Development Program of China [2018YFB0704100]
  4. Key Areas Research and Development Program of Guangdong Province [2019B010941001]
  5. Natural Science Foundation of China [51603086, 21576112]
  6. Natural Science Foundation Project of Jilin Province [20160520131JH, 20180101181JC, 20180623042TC]
  7. Project of Human Resources and Social Security Department of Jilin Province [2017956]
  8. Project of Jilin Province Development and Reform Commission [2019C044]
  9. Science and Technology Research Project of the Department of Education of Jilin Province [2016-218]

Ask authors/readers for more resources

One of the attractive ways to develop efficient and cost-effective inverted perovskite solar cells (PVSCs) is through the use of dopant-free hole transporting materials (HTMs) with facile synthesis and a lower price tag. Herein, two organic small molecules with a fluorene core are presented as dopant-free HTMs in inverted PVSCs, namely, FB-OMeTPA and FT-OMeTPA. The two molecules are designed in such a way they differ by replacing one of the benzene rings (FB-OMeTPA) with thiophene (FT-OMeTPA), which leads to a significantly improved coplanarity as manifested in the redshift of the absorbance and a smaller bandgap energy. Density functional theory calculations show that FT-OMeTPA has a strong Pb2+-S interaction at the FT-OMeTPA/perovskite interface, allowing surface passivation and facilitating charge transfer across interfaces. As a result, the PVSCs based on FT-OMeTPA exhibit a much higher hole mobility, power conversion efficiency, operational stability, and less hysteresis as compared with devices based on FB-OMeTPA.

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