Journal
JOURNAL OF PHYSICAL CHEMISTRY C
Volume 122, Issue 1, Pages 377-385Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.7b08943
Keywords
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Funding
- National Research Foundation of Korea (NRF) - Korea government (MSIP) [2015R1A2A1A15054541]
- Ministry of Trade, Industry & Energy (MOTIE, Korea) under Industrial Strategic Technology Development Program [10068075]
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The deposition temperature has a significant effect on the growth and physicochemical properties of ZnO thin films. However, changes within a low temperature range have not yet been fully investigated. In this study, ZnO and fluorine doped (F-doped) ZnO (ZnO:F) thin films were synthesized on glass substrates by atomic layer deposition, and the effect of deposition temperature (80-160 degrees C) on the crystallization behavior and electrical, optical, and band-structural properties of the thin films were analyzed. During deposition, a constant fluorine concentration was maintained in the anionic pulse gas by employing a 200:1 (v/v) mixing ratio of deionized water to hydrofluoric acid. We found that c-axis growth was preferred with ZnO thin films, while a-axis growth was preferred for ZnO:F thin films. An enhancement in the carrier concentration was also observed in both thin films with increase in the deposition temperature. In addition, the optical transmittance of ZnO:F thin films was slightly higher than. that of ZnO thin films, and this transmittance decreased with increasing deposition temperature. More significantly, F-doping led to a larger optical band gap in ZnO:F thin films than in ZnO thin films due to an increase in the carrier concentration with F-doping.
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