Journal
PHYSICAL REVIEW B
Volume 100, Issue 11, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.100.115439
Keywords
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Funding
- National Natural Science Foundation of China [11674084]
- Program for Science and Technology Innovation Talents in Universities of Henan Province [18HASTIT029]
- Science and Technology Program of Henan [182102210368]
- Key Program for Science and Technology of Henan Province [162102210264]
- High-Performance Computing Center of Henan Normal University
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Band gap engineering of graphene has been intensively studied, but it is still difficult to be realized effectively in practice, which limits its applications in optoelectronics. Here, by using first-principles methods, we predicate that the band gap of graphene can be obviously enlarged up to 0.83 eV and type-I band alignment is also realized in the graphene/BN/MX2 (M = Mo, W; X = S, Se) heterotrilayers when the interlayer distance is compressed. Moreover, the electrons and holes can be confined inside the gap opened graphene layer, and the staggered band alignment can be formed under the presence of electric field as well as the vertical pressure in the graphene/BN/MX2 heterotrilayers. Our results may pay an effective route to tune the gap of graphene and broaden its applications in optoelectronic fields.
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