Journal
JOURNAL OF ADVANCED DIELECTRICS
Volume 9, Issue 4, Pages -Publisher
WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S2010135X19500322
Keywords
Oxide semiconductor; beta-Ga2O3 epitaxy; optical transmission spectrum; pulsed laser deposition; crystal growth
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Funding
- National Natural Science Foundation of China [61674165, 61604167, 61574160, 61704183, 61404159, 11604366]
- Natural Science Foundation of Jiangsu Province [BK20170432, BK20160397, BK20140394]
- National Key R&D Program of China [2016YFB0401803]
- Strategic Priority Research Program of the Chinese Academy of Science [XDA09020401]
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In this work, we have successfully grown high quality epitaxial beta-Ga2O3 thin films on beta-Ga2O3 (100) and Al2O3 (0001) substrates using pulsed laser deposition (PLD). By optimizing temperature and oxygen pressure, the best conditions were found to be 650700 degrees C and 0.5 Pa. To further improve the quality of hetero-epitaxial beta-Ga2O3, the sapphire substrates were pretreated for atomic terraced surface by chemical cleaning and high temperature annealing. From the optical transmittance measurements, the films grown at 600-750 degrees C exhibit a clear absorption edge at deep ultraviolet region around 250-275 nm wavelength. High resolution transmission electron microscope (HRTEM) images and X-ray diffraction (XRD) patterns demonstrate that beta-Ga2O3(-201)//Al2O3(0001) epitaxial texture dominated the epitaxial oxide films on sapphire substrate, which opens up the possibilities of high power electric devices.
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