Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 7, Issue 39, Pages 12075-12079Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9tc03718g
Keywords
-
Funding
- National Key Research and Development Program of China [2018YFB1801900]
- National Natural Science Foundation of China [51702102, 51572091, 61704058]
- Key Area Research and Development Project of Guangzhou Province [2019B010129001, 2019B010128002]
- China Postdoctoral Science Foundation [2017M610523]
Ask authors/readers for more resources
This paper reports a sandwich-structured AlGaN/GaN high electron mobility transistor (HEMT). The design includes a bottom gate, a top field plate and an AlN dielectric layer, which realized broad transconductance (gate voltage operating between -3 V to 3 V) and high off-state breakdown voltage (620 V @ V-G = -10 V) simultaneously. The device shows great potential in the application of high-power electronics with good linear characteristics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
