☆ 3.8 Proceedings Paper

Physics based Device Modeling of GaN High Electron Mobility Transistor (HEMT) for Terahertz Applications

2019 URSI ASIA-PACIFIC RADIO SCIENCE CONFERENCE (AP-RASC) (2019)

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2019 URSI ASIA-PACIFIC RADIO SCIENCE CONFERENCE (AP-RASC)

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IEEE

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Engineering, Electrical & Electronic

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