Journal
NPJ 2D MATERIALS AND APPLICATIONS
Volume 3, Issue -, Pages -Publisher
NATURE RESEARCH
DOI: 10.1038/s41699-019-0123-5
Keywords
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Funding
- NanoFab2D ERC Starting grant
- Hungarian National Research, Development and Innovation Office (NKFIH) [KH-130413, K-115608]
- NIIF
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MoS2 single layers are valued for their sizeable direct bandgap at the heart of the envisaged electronic and optoelectronic applications. Here we experimentally demonstrate that moderate strain values (similar to 2%) can already trigger an indirect bandgap transition and induce a finite charge carrier density in 2D MoS2 layers. A conclusive proof of the direct-to-indirect bandgap transition is provided by directly comparing the electronic and optical bandgaps of strained MoS2 single layers obtained from tunneling spectroscopy and photoluminescence measurements of MoS2 nanobubbles. Upon 2% biaxial tensile strain, the electronic gap becomes significantly smaller (1.45 +/- 0.15 eV) than the optical direct gap (1.73 +/- 0.1 eV), clearly evidencing a strain-induced direct to indirect bandgap transition. Moreover, the Fermi level can shift inside the conduction band already in moderately strained (similar to 2%) MoS2 single layers conferring them a metallic character.
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