Journal
ACS APPLIED ELECTRONIC MATERIALS
Volume 1, Issue 6, Pages 869-876Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.9b00061
Keywords
transport properties; topological nodal-line semimetal; Shubnikov-de Haas oscillations; Fermi surface; DFT calculation; band topology
Funding
- National Natural Science Foundation of China [51572278, 51790491, 51872278, 11674055]
- National Key Research and Development Plan [2016YFA0300103, 2015CB921201]
- Jiangxi Key Laboratory for Two-Dimensional Materials
- UOW
Ask authors/readers for more resources
Although the band topology of ZrGeSe has been studied via the magnetic torque technique, the electronic transport behaviors related to the relativistic fermions in ZrGeSe are still unknown. Here, we first report systematic electronic transport properties of high-quality ZrGeSe single crystals under magnetic fields up to 14 T. Resistivity plateaus of temperature-dependent resistivity curves in both the presence and absence of magnetic fields as well as large, nonsaturating magnetoresistance in the low-temperature region were observed. By analyzing the temperature- and angular-dependent Shubnikov-de Haas oscillations and fitting it via the Lifshitz-Kosevich (LK) formula with the Berry phase being taken into account, we proved that Dirac fermions dominate the electronic transport behaviors of ZrGeSe and the presence of the nontrivial Berry phase. First-principles calculations demonstrate that ZrGeSe possesses Dirac bands and normal bands near Fermi surface, resulting in the observed magnetotransport phenomena. These results demonstrate that ZrGeSe is a topological nodal-line semimetal, which provides a fundamentally important platform to study the quantum physics of topological semimetals.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available