4.6 Article

Organic Bulk Heterojunction Infrared Photodiodes for Imaging Out to 1300 nm

Journal

ACS APPLIED ELECTRONIC MATERIALS
Volume 1, Issue 5, Pages 660-666

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.9b00009

Keywords

organic photodetector; infrared; density of states; compressive sensing; capacitance spectroscopy; space charge accumulation

Funding

  1. National Science Foundation [NSF ECCS1839361, NSF OIA-1632825, DGE-1449999]
  2. NSF [ECCS-1542148]
  3. Air Force Office of Scientific Research (AFOSR) through the Organic Materials Chemistry Program [FA9550-17-1-0261]

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This work studies organic bulk heterojunction photodiodes with a wide spectral range capable of imaging out to 1.3 mu m in the shortwave infrared. Adjustment of the donor-to-acceptor (polymer:fullerene) ratio shows how blend composition affects the density of states (DOS) which connects materials composition and optoelectronic properties and provides insight into features relevant to understanding dispersive transport and recombination in the narrow bandgap devices. Capacitance spectroscopy and transient photocurrent measurements indicate the main recombination mechanisms arise from deep traps and poor extraction from accumulated space charges. The amount of space charge is reduced with a decreasing acceptor concentration; however, this reduction is offset by an increasing trap DOS. A device with 1:3 donor-to-acceptor ratio shows the lowest density of deep traps and the highest external quantum efficiency among the different blend compositions. The organic photodiodes are used to demonstrate a single-pixel imaging system that leverages compressive sensing algorithms to enable image reconstruction.

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